SiC(碳化硅)MOSFET

  

击穿电压 产品型号 封装 RDS(on)
(mΩ@25℃)
额定电流 最高结温 规格书
(V) (@25℃)
1200 JPM120008M4AA TO-247-4L Plus 7.5 230 175℃

JPM120010B4AI TO-247-4L 10 186 175℃ -
JPM120012B4AI TO-247-4L 11 173 175℃

JPM120016B4AI TO-247-4L 15 126 175℃

JPM120020B4AI TO-247-4L 20 104 175℃

JPM120040B40I TO-247-4L 30 80 175℃

JPM120040B4AI TO-247-4L 40 58 175℃

JPM120040C7AI TO-263-7L 40 61 175℃

JPM120080B42I TO-247-4L 60 30 175℃

JPM120080B40I TO-247-4L 80 30 175℃

JPM120080B4AI TO-247-4L 80 34 175℃

JPM120080C7AI TO-263-7L 80 37 175℃

1700 JPM170750B31I TO-247-3L 750 4.6 175℃

JPM170750C72I TO-263-7L 750 7.5 175℃