SiC(碳化硅)MOSFET
击穿电压 | 产品型号 | 封装 | RDS(on) (mΩ@25℃) |
额定电流 | 最高结温 | 规格书 |
(V) | (@25℃) | |||||
1200 | JPM120008M4AA | TO-247-4L Plus | 7.5 | 230 | 175℃ | |
JPM120010B4AI | TO-247-4L | 10 | 186 | 175℃ | - | |
JPM120012B4AI | TO-247-4L | 11 | 173 | 175℃ | ||
JPM120016B4AI | TO-247-4L | 15 | 126 | 175℃ | ||
JPM120020B4AI | TO-247-4L | 20 | 104 | 175℃ | ||
JPM120040B40I | TO-247-4L | 30 | 80 | 175℃ | ||
JPM120040B4AI | TO-247-4L | 40 | 58 | 175℃ | ||
JPM120040C7AI | TO-263-7L | 40 | 61 | 175℃ | ||
JPM120080B42I | TO-247-4L | 60 | 30 | 175℃ | ||
JPM120080B40I | TO-247-4L | 80 | 30 | 175℃ | ||
JPM120080B4AI | TO-247-4L | 80 | 34 | 175℃ | ||
JPM120080C7AI | TO-263-7L | 80 | 37 | 175℃ | ||
1700 | JPM170750B31I | TO-247-3L | 750 | 4.6 | 175℃ | |
JPM170750C72I | TO-263-7L | 750 | 7.5 | 175℃ |