SiC(碳化硅)模组
击穿电压 | 产品型号 | 封装 | RDS(ON) (mΩ@25℃) | 额定电流(A) | 最高结温 |
(V) | (@25℃) | ||||
1200 | JPPS120008S7AI | SOT-227 | 8 | 210 | 175℃ |
JPPS120012S7AI | SOT-227 | 12 | 170 | 175℃ | |
JPPS120020S7AI | SOT-227 | 20 | 100 | 175℃ | |
JPPH120100H4AI | 34mm | 16 | 120 | 175℃ | |
JPPH120300H3AI | ED3 | 4 | 300 | 175℃ | |
JPPT120480H1AA | HPD | 2 | 480 | 175℃ | |
JPPH120250E2AI | E2 | 4 | 250 | 175℃ | |
JPPH120200E2AI | E2 | 6 | 200 | 175℃ | |
JPPF120100E2AI | E2 | 12 | 100 | 175℃ |
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